vishay 1n4942 to 1n4948 document number 86092 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 1 17031 fast sinterglass switching rectifier features ? high temperature metallurgically bonded con- struction hermetically sealed package cavity-free glass passivated junction 1.0 ampere operation at t amb = 55 c with no ther- mal runaway typical i r less than 0.1 a capable of meeting environmental standards of mil-s-19500 fast switching for high efficiency high temperature soldering guaranteed: 350 c/ 10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs. (2.3 kg) tension mechanical data case: jedec do-204ap solid glass body terminals: solder plated axial leads, solderable per milstd- 750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 560 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation 1n4942 v rrm = 200 v 1n4944 v rrm = 400 v 1n4946 v rrm = 600 v 1n4947 v rrm = 800 v 1n4948 v rrm = 1000 v parameter tes t c o nd iti on sub type symbol value unit maximum repetitive peak reverse voltage 1n4942 v rrm 200 v 1n4944 v rrm 400 v 1n4946 v rrm 600 v 1n4947 v rrm 800 v 1n4948 v rrm 1000 v maximum rms voltage 1n4942 v rms 140 v 1n4944 v rms 280 v 1n4946 v rms 420 v 1n4947 v rms 560 v 1n4948 v rms 700 v maximum dc blocking voltage 1n4942 v dc 200 v 1n4944 v dc 400 v 1n4946 v dc 600 v 1n4947 v dc 800 v 1n4948 v dc 1000 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t amb = 55 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 25 a
document number 86092 rev. 1, 12-nov-02 www.vishay.com 2 vishay 1n4942 to 1n4948 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified 1) thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, p.c.b. mounted electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25c unless otherwise specified) parameter te s t c o n d i t i o n sub type symbol value unit typical thermal resistance 1) r 55 c operating junction and storage temperature range t j , t stg - 65 to + 175 c parameter te s t c o n d i t i o n sub type symbol min typ. max unit minimum reverse breakdown voltage i r = 50 a 1n4942 v (br) 220 v i r = 50 a 1n4944 v (br) 440 v i r = 50 a 1n4946 v (br) 660 v i r = 50 a 1n4947 v (br) 880 v i r = 50 a 1n4948 v (br) 1100 v maximum instantaneous forward voltage i f = 1 a v f 1.3 v i f = 2 a, t amb = - 40 c v f 2.5 v maximum dc reverse current at rated dc blocking voltage, t amb = 25 c i r 1.0 a at rated dc blocking voltage, t amb = 175 c i r 500 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 25 a 1n4942 t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 25 a 1n4944 t rr 150 ns i f = 0.5 a, i r = 1.0 a, i rr = 25 a 1n4946 t rr 250 ns i f = 0.5 a, i r = 1.0 a, i rr = 25 a 1n4947 t rr 250 ns i f = 0.5 a, i r = 1.0 a, i rr = 25 a 1n4948 t rr 500 ns typical junction capacitance v r = 4.0 v, f = 1 mhz c j 15 pf figure 1. maximum forward current derating curve 0 0.75 1.0 25 50 75 100 125 150 175 average forward rectified current (a) ambient temperature ( c) 0.5 0.25 resistive or inductive load 0.375(9.5mm) lead length g1n4942_01 figure 2. maximum non-repetitive peak forward surge current 0 20 10 30 1 100 10 peak forward surge current (a) number of cycles at 60 h z t j =t j max. 8.3ms single half sine-wave (jedec method) g1n4942_02
vishay 1n4942 to 1n4948 document number 86092 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reverse leakage characteristics figure 5. typical junction capacitance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 0.01 0.1 10 1 instantaneous forward current (a) g1n4942_03 020 60 40 100 80 instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) t j = 125 c t j =25 c 0.01 0.1 10 20 1 t j =75 c g1n4942_04 reverse voltage (v) junction capacitance (pf) 110100 30 10 1 g1n4942_05
document number 86092 rev. 1, 12-nov-02 www.vishay.com 4 vishay 1n4942 to 1n4948 vishay semiconductors package dimensions in mm 0.034 (0.86) 0.028 (0.71) dia. 0.150 (3.8) 0.100 (2.5) dia. 1.0 (25.4) min. 0.240 (6.1) max. 1.0 (25.4) min. 17030
vishay 1n4942 to 1n4948 document number 86092 rev. 1, 12-nov-02 vishay semiconductors www.vishay.com 5 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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